ZnO-BASED SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING ZnO-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a novel technique for doping a ZnO-based semiconductor with Cu.SOLUTION: A method for manufacturing a ZnO-based semiconductor layer comprises: a step (a) of supplying Zn, O and, if necessary, Mg to the upper part of a base layer to form an MgZnO (0≤x≤0.6) single crystal film; and a step (b) of supplying Cu onto the MgZnO (0≤x≤0.6) single crystal film. The step (a) and the step (b) are alternately repeated to form an MgZnO (0≤x≤0.6) layer doped with Cu.