发明名称 |
USE OF ETCH PROCESS POST WORDLINE DEFINITION TO IMPROVE DATA RETENTION IN A FLASH MEMORY DEVICE |
摘要 |
Embodiments of the present disclosure describe techniques and configurations relating to use of an etch process post wordline definition to improve data retention in a flash memory device. In one embodiment, a method includes forming a plurality of wordline structures on a substrate, wherein individual wordline structures of the plurality of wordline structures include a control gate having an electrically conductive material and a cap having an electrically insulative material formed on the control gate, depositing an electrically insulative material to form a liner on a surface of the individual wordline structures, and etching the liner to remove at least a portion of the liner. Other embodiments may be described and/or claimed.
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申请公布号 |
US2013264628(A1) |
申请公布日期 |
2013.10.10 |
申请号 |
US201113993444 |
申请日期 |
2011.09.22 |
申请人 |
KOVAL RANDY J.;HINEMAN MAX F.;WEIMER RONALD A.;SHAMANNA VINAYAK K.;GRAETTINGER THOMAS M.;KUEBER WILLIAM R.;LARSEN CHRISTOPHER;SCHRINSKY ALEX J. |
发明人 |
KOVAL RANDY J.;HINEMAN MAX F.;WEIMER RONALD A.;SHAMANNA VINAYAK K.;GRAETTINGER THOMAS M.;KUEBER WILLIAM R.;LARSEN CHRISTOPHER;SCHRINSKY ALEX J. |
分类号 |
H01L21/306;H01L29/788 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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