发明名称 PLASMA PROCESS, FILM DEPOSITION METHOD AND SYSTEM USING ROTARY CHUCK
摘要 A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.
申请公布号 US2013264308(A1) 申请公布日期 2013.10.10
申请号 US201213439609 申请日期 2012.04.04
申请人 YANG YU-LUNG;XIAO YING;LIN CHIN-HSIANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YANG YU-LUNG;XIAO YING;LIN CHIN-HSIANG
分类号 B05C11/02;C03C25/68;C23C14/54;H05H1/24 主分类号 B05C11/02
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