发明名称 |
COMPOSITE SUBSTRATE AND PRODUCTION METHOD |
摘要 |
<p>A composite substrate which includes a silicon layer having less lattice defects is provided. A composite substrate (40) includes an insulating substrate (30) and a functional layer (21) of which one main surface is bonded to an upper surface of the substrate (30). A dopant concentration of the functional layer (21) decreases from the other main surface toward the substrate (30) side in a thickness direction of the functional layer.</p> |
申请公布号 |
EP2648210(A1) |
申请公布日期 |
2013.10.09 |
申请号 |
EP20110845593 |
申请日期 |
2011.11.30 |
申请人 |
KYOCERA CORPORATION |
发明人 |
KITADA, MASANOBU;OGAWA, MOTOKAZU |
分类号 |
H01L21/02;H01L21/18;H01L21/20;H01L21/205;H01L27/12;H01L29/32 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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