发明名称 |
METHODS FOR ETCHING CARBON NANO-TUBE FILMS FOR USE IN NON-VOLATILE MEMORIES |
摘要 |
<p>Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube ("CNT") film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.</p> |
申请公布号 |
EP2263252(B1) |
申请公布日期 |
2013.10.09 |
申请号 |
EP20090730879 |
申请日期 |
2009.04.10 |
申请人 |
SANDISK 3D LLC |
发明人 |
SCHRICKER, APRIL, D.;FU, ANDY;KONEVECKI, MICHAEL;MAXWELL, STEVEN |
分类号 |
H01L21/311;B82Y10/00;B82Y40/00;H01L21/3213;H01L27/10;H01L27/24;H01L45/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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