Semiconductor device with interconnection via in the substrate and method of production

摘要

The semiconductor device comprises a substrate (1) of semiconductor material with a main surface (11) and an opposite surface (12), an integrated circuit component (2) in the substrate at or near the main surface, a structured metal plane (3) at a distance from the substrate above the main surface, a dielectric layer (4) between the metal plane and the substrate, an electrical interconnect (5) between the metal plane and the integrated circuit component, the interconnect traversing the dielectric layer, and an interconnection via (6) comprising a metallization (7) leading through the substrate between the main surface and the opposite surface. The metallization is connected to the metal plane via a further electrical interconnect (8) traversing the dielectric layer.