SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE
摘要
<p>A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.</p>
申请公布号
EP2467872(A4)
申请公布日期
2013.10.09
申请号
EP20100810719
申请日期
2010.08.23
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人
OHTA, HIROAKI;WU, FENG;TYAGI, ANURAG;CHAKRABORTY, ARPAN;SPECK, JAMES S.;DENBAARS, STEVEN P.;NAKAMURA, SHUJI;YOUNG, ERIN, C.