发明名称 Output transistor leakage compensation for ultra low-power LDO regulator
摘要 <p>Circuits and methods to compensate leakage current of a LDO are disclosed. The compensation is achieved by a temperature dependent sink current generation, which has a nearly zero current consumption increase of about 50nA at room temperature and starts sink current at temperatures about above 85 to 100 degrees Celsius, which is corresponding to a range of temperature wherein leakage currents come into account,</p>
申请公布号 EP2648061(A1) 申请公布日期 2013.10.09
申请号 EP20120368010 申请日期 2012.04.06
申请人 DIALOG SEMICONDUCTOR GMBH 发明人 KRENZKE, RAINER
分类号 G05F1/56;G05F3/30 主分类号 G05F1/56
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