| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of compatibly achieving removal of a reaction product deposited on a dielectric window and obtaining stability of an etching rate of a workpiece. <P>SOLUTION: An electrode 8 which is disposed facing an upper opening 2b of a chamber 2, shaped winding and spreading from a side of a center part 8a to a side of a circumferential part 8b, and operative to etch a substrate 4 held at a placement part 3 by making a reaction gas in the chamber 2 into plasma by induction coupling comprises a coil part 11 as an induction antenna component which winds and spreads from an outer circumferential surface of a vertically intermediate part of a cylinder shaft member 10 positioned at the center part 8a and applied with high-frequency electric power from an upper side, and an operation part as a capacitive antenna component such that a low-side end surface of the cylindrical shaft member 10 is disposed closely to an upper surface 5a of the dielectric window 5. Consequently, an induction component is not easily generated between the operation part and coil part and the plasma processing apparatus compatibly remove the reaction product deposited on the dielectric window and obtain the stability of the etching rate of a workpiece. <P>COPYRIGHT: (C)2011,JPO&INPIT |
