High-efficiency light-emitting diode and method of fabricating the same

摘要

Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a support substrate (41), a semiconductor stack (30) arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer (29), an active layer (27) and an n-type semiconductor layer (25), a first metal layer (31) interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad (51) arranged on the semiconductor stack, an electrode extension (51a) extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer (33) interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension (51a), and a second insulating layer (47) interposed between the first electrode pad (51) and the semiconductor stack (30).