| 发明名称 |
METHOD FOR THE HYDROGEN PASSIVATION OF SEMICONDUCTOR LAYERS |
| 摘要 |
<p>The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof.</p> |
| 申请公布号 |
EP2647037(A1) |
申请公布日期 |
2013.10.09 |
| 申请号 |
EP20110779713 |
申请日期 |
2011.11.11 |
| 申请人 |
EVONIK DEGUSSA GMBH |
发明人 |
STENNER, PATRIK;WIEBER, STEPHAN;COELLE, MICHAEL;PATZ, MATTHIAS;CARIUS, REINHARD;BRONGER, TORSTEN |
| 分类号 |
H01L21/30;H01L31/18;H05H1/34;H05H1/48 |
主分类号 |
H01L21/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
