发明名称 |
Composite Wafer for Fabrication of Semiconductor Devices |
摘要 |
A composite wafer includes a first substrate having a first vertical thickness and a top surface, the top surface being prepared in a state for subsequent semiconductor material epitaxial deposition. A carrier substrate is disposed beneath the first substrate. The carrier substrate has a second vertical thickness greater than the first vertical thickness. An interlayer bonds the first substrate to the carrier substrate. |
申请公布号 |
EP2605269(A3) |
申请公布日期 |
2013.10.09 |
申请号 |
EP20120193679 |
申请日期 |
2012.11.21 |
申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
KOUDYMOV, ALEXEI;RAMDANI, JAMAL;SWAMINATHAN, KIERTHI |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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