发明名称 Method for making light emitting diode using carbon nanotube layer
摘要 A method of making a LED includes following steps. A substrate with an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A semiconductor epitaxial layer is grown on the epitaxial growth surface, and the semiconductor epitaxial layer includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer. The semiconductor epitaxial layer is etched to expose part of the carbon nanotube layer. A first electrode is formed on a surface of the semiconductor epitaxial layer which is away from the substrate. A second electrode is formed to electrically connect with the part of the carbon nanotube layer which is exposed.
申请公布号 US8551807(B2) 申请公布日期 2013.10.08
申请号 US201113288192 申请日期 2011.11.03
申请人 WEI YANG;FAN SHOU-SHAN;TSINGHUA UNIVERSITY;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 WEI YANG;FAN SHOU-SHAN
分类号 H01L51/40;H01L51/50 主分类号 H01L51/40
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