Mechanical devices having bistable positions are utilized to form switches and memory devices. The devices are actuatable to different positions and may be coupled to a transistor device in various configurations to provide memory devices. Actuation mechanisms include electrostatic methods and heat. In one form, the mechanical device forms a gate for a field effect transistor. In a further form, the device may be a switch that may be coupled to the transistor in various manners to affect its electrical characteristics when on and off. The memory switch in one embodiment comprises side walls formed with tensile or compressive films. A cross point switch is formed from a plurality of intersecting conductive rows and columns of conductors. Actuatable switches are positioned between each intersection of the rows and columns such that each intersection is independently addressable.
申请公布号
US8553455(B2)
申请公布日期
2013.10.08
申请号
US20060528712
申请日期
2006.09.27
申请人
TIWARI SANDIP;KIM CHUNG WOO;CORNELL RESEARCH FOUNDATION, INC.;SAMSUNG ELECTRONICS CO., LTD.