发明名称 Organic transistor and manufacturing method thereof
摘要 PURPOSE: An organic transistor and a method of manufacture thereof the organic transistor of the light weight can be manufactured. Hole and the electron shifting layer of the existing organic light-emitting DIODE have no and structure can be simplified more. CONSTITUTION: An organic transistor and a method of manufacture thereof The source(20b), the drain electrode(20a), hole implant layer(30), organic thin film layer(40), electron injection layer, the gate and cathode electrode are included. Source and drain electrode separation are formed leaving the regular interval on the substrate(10).
申请公布号 KR101315560(B1) 申请公布日期 2013.10.08
申请号 KR20090033736 申请日期 2009.04.17
申请人 发明人
分类号 H01L51/10;H01L51/40 主分类号 H01L51/10
代理机构 代理人
主权项
地址