| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method of the semiconductor device satisfy both suppression of rise in contact resistance and improvement of a breakdown voltage near the end part of a groove part. CONSTITUTION: A groove part (GT) is formed between a source offset region and a drain offset region. A gate insulating film (GI) covers the side and bottom of the groove part. A gate electrode (GE) is formed within the groove part at least in a plan view. A contact (GC) is in contact with the gate electrode. The contact is shifted in a first direction perpendicular to a source-drain direction relative to the centerline in groove part. [Reference numerals] (AA) Second direction; (BB) First direction |
