发明名称 |
Dummy gate for a high voltage transistor device |
摘要 |
The present disclosure provides a semiconductor device. The semiconductor device includes a first doped region and a second doped region both formed in a substrate. The first and second doped regions are oppositely doped. The semiconductor device includes a first gate formed over the substrate. The first gate overlies a portion of the first doped region and a portion of the second doped region. The semiconductor device includes a second gate formed over the substrate. The second gate overlies a different portion of the second doped region. The semiconductor device includes a first voltage source that provides a first voltage to the second gate. The semiconductor device includes a second voltage source that provides a second voltage to the second doped region. The first and second voltages are different from each other.
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申请公布号 |
US8552495(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US20100910000 |
申请日期 |
2010.10.22 |
申请人 |
TSAI YUNG-CHIH;LIN HAN-CHUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI YUNG-CHIH;LIN HAN-CHUNG |
分类号 |
H01L29/66;H01L21/336 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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