Semiconductor device

摘要

A trench gate transistor whose gate changes the depth thereof intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The sum of length measurements of the underlying portion of the second offset region measured from the lower corner of the trench in a direction parallel to the substrate and in a direction perpendicular to the substrate is 0.1 mum or greater.