发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device has: memory blocks; and a local bus connected to the memory blocks. Each memory block has: switches respectively provided between bit line pairs and the local bus and each of which is turned ON in response to a selection signal; a dummy local bus; first and second control circuits. The local bus and the dummy local bus are precharged to a first potential before a read operation. In the read operation, the first control circuit outputs the selection signal to a selected switch to electrically connect a selected bit line pair and the local bus, while the second control circuit supplies a second potential lower than the first potential to the dummy local bus. The first control circuit stops outputting the selection signal when a potential of the dummy local bus is decreased to a predetermined set potential that is between the first and second potentials.
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申请公布号 |
US8553483(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201213602878 |
申请日期 |
2012.09.04 |
申请人 |
TAKAHASHI HIROYUKI;YOSHIDA MASAHIRO;RENESAS ELECTRONICS CORPORATION |
发明人 |
TAKAHASHI HIROYUKI;YOSHIDA MASAHIRO |
分类号 |
G11C7/00;G11C7/02;G11C7/10 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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