发明名称 Semiconductor memory device
摘要 A semiconductor memory device has: memory blocks; and a local bus connected to the memory blocks. Each memory block has: switches respectively provided between bit line pairs and the local bus and each of which is turned ON in response to a selection signal; a dummy local bus; first and second control circuits. The local bus and the dummy local bus are precharged to a first potential before a read operation. In the read operation, the first control circuit outputs the selection signal to a selected switch to electrically connect a selected bit line pair and the local bus, while the second control circuit supplies a second potential lower than the first potential to the dummy local bus. The first control circuit stops outputting the selection signal when a potential of the dummy local bus is decreased to a predetermined set potential that is between the first and second potentials.
申请公布号 US8553483(B2) 申请公布日期 2013.10.08
申请号 US201213602878 申请日期 2012.09.04
申请人 TAKAHASHI HIROYUKI;YOSHIDA MASAHIRO;RENESAS ELECTRONICS CORPORATION 发明人 TAKAHASHI HIROYUKI;YOSHIDA MASAHIRO
分类号 G11C7/00;G11C7/02;G11C7/10 主分类号 G11C7/00
代理机构 代理人
主权项
地址