发明名称 |
Semiconductor structures and devices and methods of forming the same |
摘要 |
Methods of forming semiconductor structures that include bodies of a semiconductor material disposed between rails of a dielectric material are disclosed. Such methods may include filling a plurality of trenches in a substrate with a dielectric material and removing portions of the substrate between the dielectric material to form a plurality of openings. In some embodiments, portions of the substrate may be undercut to form a continuous void underlying the bodies and the continuous void may be filled with a conductive material. In other embodiments, portions of the substrate exposed within the openings may be converted to a silicide material to form a conductive material under the bodies. For example, the conductive material may be used as a conductive line to electrically interconnect memory device components. Semiconductor structures and devices formed by such methods are also disclosed.
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申请公布号 |
US8552525(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201113175468 |
申请日期 |
2011.07.01 |
申请人 |
WELLS DAVID H.;SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC. |
发明人 |
WELLS DAVID H.;SANDHU GURTEJ S. |
分类号 |
H01L29/06;H01L21/764 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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