发明名称 METHOD FOR MANUFACTURING REFLECTIVE MASK AND APPARATUS FOR MANUFACTURING REFLECTIVE MASK
摘要 <p>PURPOSE: A manufacturing apparatus of a reflective mask and a method thereof minimize changes in optical performance of a capping layer formed of ruthenium. CONSTITUTION: A manufacturing method of a reflective mask comprises a step of forming a reflection layer (202) on the main side of a substrate (201); a step of forming a ruthenium-containing capping layer (203) on the reflection layer; a step of forming an absorption layer (204) on the capping layer; a step of forming a pattern region (216) on the absorption layer; a step of removing a resist mask (211) used when the pattern region is formed; and a step of forming a light-shielding layer on the absorption layer, the capping layer, and the reflection layer. The resist mask-removing process carries out a dry etching treatment by using the mixture gas of ammonia gas and nitrogen gas, or only ammonia gas.</p>
申请公布号 KR20130110050(A) 申请公布日期 2013.10.08
申请号 KR20130030774 申请日期 2013.03.22
申请人 SHIBAURA MECHATRONICS CORPORATION 发明人 YAMAZAKI KATSUHIRO;DEMURA KENSUKE
分类号 G03F1/24;H01L21/027 主分类号 G03F1/24
代理机构 代理人
主权项
地址