METHOD FOR FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE
摘要
<p>PURPOSE: A method of forming fine patterns of a semiconductor device forms highly integrated semiconductor devices by forming fine patterns arranged in a zigzag using line and space patterns. CONSTITUTION: A first hard mask pattern (41) extended in a first direction is formed on a lower film (20). A second hard mask pattern (61) filled in gaps between the first hard mask patterns is formed. A first mask pattern extended in a second direction perpendicular to the first direction is formed on the first and second hard mask patterns. First openings are formed by etching the first hard mask patterns. A second mask pattern (70) is filled in the first openings and is extended in the second direction. Second openings arranged in the oblique direction from the first openings are formed by etching the second hard mask patterns.</p>
申请公布号
KR20130109822(A)
申请公布日期
2013.10.08
申请号
KR20120031872
申请日期
2012.03.28
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, JOON SOO;YOON, KUK HAN;KIM, JOON;KIM, CHEOL HONG;NAM, SEOK WOO