| 摘要 |
PURPOSE: A nitride semiconductor light-emitting device and a method for manufacturing the same are provided to improve the light-emitting efficiency and the reliability of the device by using an etching method in order to reduce damage to a nitride semiconductor. CONSTITUTION: At least one first conductive gallium nitride-based semiconductor layer(22) is formed on a substrate(21). An active layer(25) is formed on the first conductive gallium nitride-based semiconductor layer. At least one second conductive gallium nitride-based semiconductor layer(26) is formed on the active layer. A plurality of patterns is arranged from the second conductive gallium nitride-based semiconductor layer to a part of the first conductive gallium nitride-based semiconductor layer. An insulating unit(24) is formed on the patterns. |
