| 摘要 |
A method for manufacturing a SiO2 film is provided to improve step coverage and good gap-fill capability and have a less carbon content. A method for manufacturing a SiO2 film comprises the following steps of: performing a thermal chemical vapor deposition(CVD) with respect to a SiO2 film by using trimethylsilane(TMS) and ozone(O3), and processing plasma with respect to the SiO2 film vapor-deposited by the thermal CVD using gas which includes oxygen or hydrogen. |
