发明名称 |
Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device |
摘要 |
A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises semiconductor substrate, a first layer of a first semiconductor material over the semiconductor substrate and a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material.
|
申请公布号 |
US8552501(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201213447369 |
申请日期 |
2012.04.16 |
申请人 |
ORLOWSKI MARIUS;WILD ANDREAS;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ORLOWSKI MARIUS;WILD ANDREAS |
分类号 |
H01L27/01;H01L27/12;H01L31/0392 |
主分类号 |
H01L27/01 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|