发明名称 |
Nonvolatile memory devices having gate structures doped by nitrogen |
摘要 |
Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a tunnel insulating layer is provided between the charge storage pattern and the integrated circuit substrate. A gate pattern is provided on the charge storage pattern. A blocking insulating layer is provided between the charge storage pattern and the gate pattern. The sidewall of the charge storage pattern includes a first nitrogen doped layer. Related methods of fabricating nonvolatile memory devices are also provided herein.
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申请公布号 |
US8552488(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201113181134 |
申请日期 |
2011.07.12 |
申请人 |
LEE CHANG-HYUN;PARK DONG-GUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;PARK DONG-GUN |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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