发明名称 |
Semiconductor memory device for data sensing |
摘要 |
A semiconductor memory device includes a memory cell and a first reference memory cell. The memory cell includes a first switching element and a first capacitor for storing data. The first switching element is controlled by a first wordline, and has a first terminal connected to a first terminal of the first capacitor and a second terminal connected to a first bitline. The first capacitor has a second terminal for receiving a first plate voltage. The first reference memory cell includes a first reference switching element and a first capacitor. The first switching element is controlled by a first reference wordline, and has a first terminal connected to a first terminal of the first reference capacitor and a second terminal connected to a second bitline. The first reference capacitor has a second terminal receiving a first reference plate voltage different from the first plate voltage.
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申请公布号 |
US8553484(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201113238553 |
申请日期 |
2011.09.21 |
申请人 |
KIM SUA;PARK CHUL-WOO;HWANG HONG-SUN;YU HAK-SOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUA;PARK CHUL-WOO;HWANG HONG-SUN;YU HAK-SOO |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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