发明名称 |
Non-volatile memory device, erasing method thereof, and memory system including the same |
摘要 |
Provided is an erasing method of a nonvolatile memory device. The erasing method applies a word line erase voltage to a plurality of word lines connected to the memory cells respectively, applies a specific voltage to a ground selection line connected to the ground selection transistor, applies an erase voltage to a substrate in which the memory string formed during the step applying the specific voltage to the ground selection line, and floats the ground selection line in response to a voltage change of the substrate.
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申请公布号 |
US8553466(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201113023934 |
申请日期 |
2011.02.09 |
申请人 |
HAN JINMAN;KIM DOOGON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN JINMAN;KIM DOOGON |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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