发明名称 |
High-voltage vertical transistor with edge termination structure |
摘要 |
A high-voltage transistor includes a drain, a source, and one or more drift regions extending from the drain toward the source. A field plate member laterally surrounds the drift regions and is insulated from the drift regions by a dielectric layer. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
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申请公布号 |
US8552496(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US20100807016 |
申请日期 |
2010.08.26 |
申请人 |
DISNEY DONALD RAY;POWER INTEGRATIONS, INC. |
发明人 |
DISNEY DONALD RAY |
分类号 |
H01L27/088;H01L21/336;H01L29/06;H01L29/40;H01L29/417;H01L29/423;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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