发明名称 |
SRAM cells, memory circuits, systems, and fabrication methods thereof |
摘要 |
A static random access memory (SRAM) cell includes a pair of cross-coupled inverters having a first node and a second node. A first transistor is coupled between the first node and a first bit line. A second transistor is coupled between the second node and a second bit line. A third transistor is coupled with the first node. The third transistor has a threshold voltage that is higher than that of a fourth transistor of the pair of cross-coupled inverters by about 10% or more. A fifth transistor is coupled between the third transistor and a third bit line.
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申请公布号 |
US8553448(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201213609930 |
申请日期 |
2012.09.11 |
申请人 |
LEE CHEN HUNG;LIAO HUNG-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE CHEN HUNG;LIAO HUNG-JEN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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