| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device which can establish appropriate characteristics, while achieving a normally-off operation, and a method for manufacturing the same.SOLUTION: A compound semiconductor device comprises: a substrate 11; an electron transit layer 15 and an electron supply layer 17 formed above the substrate 11; and a gate electrode 19g, a source electrode 19s and a drain electrode 19d formed above the electron supply layer 17. The device further comprises an Fe doping layer 14 formed in a region which is overlapped with the gate electrode 19g in plan view between the substrate 11 and the electron transit layer 15, and in which Fe is doped for suppressing a two-dimentional electron gas 100 that is below the gate electrode 19g. |
