发明名称 ESD PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE RELATING TO ESD PROTECTION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an ESD protection circuit reduced in layout area or having high ESD resistance.SOLUTION: In an ESD protection circuit, in the application of an ESD pulse, a node 3N3 of a gate of a second NMOS transistor 3MN2 which mainly flows a surge current in an ESD protection circuit 110 is connected to a node 3N4 by a PMOS transistor switch 3MPso that an NMOS output transistor 3MNof an LED driver output circuit 210 can be turned on.
申请公布号 JP2013207388(A) 申请公布日期 2013.10.07
申请号 JP20120071896 申请日期 2012.03.27
申请人 ASAHI KASEI ELECTRONICS CO LTD 发明人 KANAI YUJI
分类号 H03K19/003;H01L21/822;H01L27/04 主分类号 H03K19/003
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