发明名称 |
ESD PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE RELATING TO ESD PROTECTION CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protection circuit reduced in layout area or having high ESD resistance.SOLUTION: In an ESD protection circuit, in the application of an ESD pulse, a node 3N3 of a gate of a second NMOS transistor 3MN2 which mainly flows a surge current in an ESD protection circuit 110 is connected to a node 3N4 by a PMOS transistor switch 3MPso that an NMOS output transistor 3MNof an LED driver output circuit 210 can be turned on. |
申请公布号 |
JP2013207388(A) |
申请公布日期 |
2013.10.07 |
申请号 |
JP20120071896 |
申请日期 |
2012.03.27 |
申请人 |
ASAHI KASEI ELECTRONICS CO LTD |
发明人 |
KANAI YUJI |
分类号 |
H03K19/003;H01L21/822;H01L27/04 |
主分类号 |
H03K19/003 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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