| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which composes a cascode circuit and which can sufficiently reduce resistance and inductance of the circuit.SOLUTION: A semiconductor device comprises a normally-off Si-MOSFET 2 and a normally-on GaN-MOSFET 3 sequentially stacked on a substrate 1. A source terminal 22 of the normally-on GaN-MOSFET 3 and a drain terminal 18 of the normally-off Si-MOSFET 2 are electrically connected with each other by a thin bump electrode 23 with sandwiching a solder layer 21 to compose a cascode connection circuit. Minimization of an electrical connection distance and maximization of an electrical connection cross section between the source terminal 22 of the normally-on GaN-MOSFET 3 and the drain terminal 18 of the normally-off Si-MOSFET 2 can be achieved by the thin bump electrode 23. |
