PATTERN FORMING METHOD, METHOD FOR SELECTING HEATING TEMPERATURE IN PATTERN FORMING METHOD, EXTREME ULTRAVIOLET RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern having a line portion having 20 nm line width or less can be formed to satisfy all of the demands for high resolution, a good pattern cross-sectional shape and high roughness performance, and to provide a method for selecting a heating temperature in the pattern forming method, an extreme ultraviolet (EUV) ray-sensitive resin composition, a resist film, and a method for manufacturing an electronic device and an electronic device using the above methods and others.SOLUTION: The pattern forming method includes steps of: (1) forming a film by using an EUV ray-sensitive resin composition including a resin having an acid decomposable group; (2) exposing the film by using EUV rays; (3) heating the film; and (4) developing the film to form a pattern, in this order. In the step (2), an optical image by the exposure has a line portion having a line width of 20 nm or less as an exposed portion or an unexposed portion. A heating temperature T(°C) in the step (3) satisfies the following expression (1). (1):[Glass transition temperature (Tg) of the resin (A)-30](°C)≤T≤glass transition temperature (Tg)(°C) of the resin (A).