| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor element manufacturing method which enables low temperature formation and low resistance of an ohmic electrode on a rear face of a single crystal silicon carbide substrate.SOLUTION: A silicon carbide semiconductor element manufacturing method comprises: a process of forming on a rear face of a silicon carbide substrate, a first metal layer having a thickness of not to completely cover the rear face of the substrate; boring multiple holes in the rear face of the silicon carbide substrate by dry etching the rear face of the silicon carbide substrate by using the first metal layer as a mask; and a process of forming a second metal layer composing an ohmic electrode on the first metal layer and on the rear face of the silicon carbide substrate which includes the multiple holes. |
