发明名称 EBG STRUCTURE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an EBG structure of a simple configuration, equipped with a small and wide stop band region.SOLUTION: An EBG structure includes an electrode part made from a first conductor, equipped with a gap, a patch part which is provided almost parallel to the electrode part and is formed of a second conductor, an insulating layer provided between the electrode part and the patch part, a first via which is provided between the patch part in the insulating layer and the electrode part, and is connected to the patch part and the electrode part, and a second via which is provided between the patch part in the insulating layer and the gap, and is connected to the patch part but not connected to the electrode part.
申请公布号 JP2013207621(A) 申请公布日期 2013.10.07
申请号 JP20120075519 申请日期 2012.03.29
申请人 TOSHIBA CORP 发明人 SASAKI TADAHIRO;ITAYA KAZUHIKO;YAMADA HIROSHI
分类号 H01P3/08;H01L23/12;H01L25/04;H01L25/18;H01Q15/14 主分类号 H01P3/08
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