| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature sensor which is hard to have high resistivity in an electrode structure for a thermistor material layer of TiAlN under high temperature environment, can be deposited directly on a film and the like without burning, and has high heat resistance and high reliability, and a method of manufacturing the same.SOLUTION: A temperature sensor includes an insulation base material 2, a thin film thermistor 3 formed on the insulation base material, and a pair of pattern electrodes 4 formed on the insulation base material so as to arrange a pair of counter electrodes 4a facing each other on the thin film thermistor. The thin film thermistor is formed of a thermistor material of TiAlN. The pattern electrode includes a joint layer 5 formed of TiN on the insulation base material, and an electrode layer 6 formed of noble metal on the joint layer. |
