发明名称 |
RELEASE MATERIAL FOR MANUFACTURING SILICON CRYSTAL INGOT, AND METHOD FOR FORMING RELEASE MATERIAL FOR MANUFACTURING SILICON CRYSTAL INGOT |
摘要 |
PROBLEM TO BE SOLVED: To prevent a release material from exfoliating from a container during growth of a silicon crystal by improving durability against thermal stress of the release material.SOLUTION: Slurry obtained by suspending powder of silicon nitride into aqueous solution including an organic binder is applied onto the inside wall surface of a heat-resistant container, and the slurry applied onto the heat-resistant container is heated and sintered under an inactive atmosphere. In a release material for manufacturing silicon crystal ingot formed in this way, the atomic ratio [C/Si] between carbon and silicon is ≤2.5, and the sintering density of each portion is uniform. |
申请公布号 |
JP2013203625(A) |
申请公布日期 |
2013.10.07 |
申请号 |
JP20120076297 |
申请日期 |
2012.03.29 |
申请人 |
JX NIPPON MINING & METALS CORP |
发明人 |
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分类号 |
C01B33/02;C01B21/068;C23C24/08 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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