发明名称 RELEASE MATERIAL FOR MANUFACTURING SILICON CRYSTAL INGOT, AND METHOD FOR FORMING RELEASE MATERIAL FOR MANUFACTURING SILICON CRYSTAL INGOT
摘要 PROBLEM TO BE SOLVED: To prevent a release material from exfoliating from a container during growth of a silicon crystal by improving durability against thermal stress of the release material.SOLUTION: Slurry obtained by suspending powder of silicon nitride into aqueous solution including an organic binder is applied onto the inside wall surface of a heat-resistant container, and the slurry applied onto the heat-resistant container is heated and sintered under an inactive atmosphere. In a release material for manufacturing silicon crystal ingot formed in this way, the atomic ratio [C/Si] between carbon and silicon is ≤2.5, and the sintering density of each portion is uniform.
申请公布号 JP2013203625(A) 申请公布日期 2013.10.07
申请号 JP20120076297 申请日期 2012.03.29
申请人 JX NIPPON MINING & METALS CORP 发明人
分类号 C01B33/02;C01B21/068;C23C24/08 主分类号 C01B33/02
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