| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change element and a manufacturing method for the same, capable of achieving power consumption reduction and miniaturization of elements without the need of a forming process.SOLUTION: A resistance change element of one embodiment of the present invention includes: a lower electrode layer 3; an upper electrode layer 5; and an oxide semiconductor layer 4. Each of the lower electrode layer 3 and the upper electrode layer 5 is composed of any of Ir, Ru, IrOx, RuOx, SrRuOand LaNiO. For example, even if Ir and Ru, though having relatively low vulnerability against oxidation, are oxidized, they will never lose an electrode feature since they can maintain a desired conductivity. Therefore, the contact resistance on a boundary surface can be reduced, eliminating an initialization process called a forming that involves high voltage application. In addition, the elimination of the forming can reduce the electric power consumption for elements, and can minimize the property fluctuation, so that the elements can be miniaturized. |
