| 摘要 |
PROBLEM TO BE SOLVED: To etch a periodic pattern using a block copolymer while forming a protective film.SOLUTION: A method for self-organizing a first polymer and a second polymer of a block copolymer and forming a periodic pattern formed in a guide layer 210 includes: a first etching step of etching the second polymer by plasma generated from first gas; a first film formation step of, after the first etching step, forming a first protective film 270 by plasma generated from second gas on surfaces of the first polymer and the guide layer, at a site other than the etched part of the second polymer; and a second etching step of, after the first film formation step, further etching the second polymer by plasma generated from the first gas. |
