| 摘要 |
PROBLEM TO BE SOLVED: To satisfy both of suppression of increase in contact resistance and increase in withstanding voltage around an end of a groove.SOLUTION: A semiconductor device comprises: a groove GT which is provided in a semiconductor layer and at least between a source off-set region and a drain off-set region in planar view, and in a source-drain direction running from the source off-set region to the drain off-set region; a gate insulation film GI which covers lateral faces and a bottom face of the groove GT; a gate electrode GE which is provided at least in the groove GT in planar view and contacts the gate insulation film GI; and a contact GC which contacts the gate electrode GE. Further, the contact GC is arranged in such a manner as to be displaced from a center line in the groove GT extending in the source-drain direction in planar view, in a first direction perpendicular to the source-drain direction, and the contact GC is provided in the groove GT in planar view. |
