| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency amplifier that implements precise temperature compensation in response to a temperature change of power amplification elements.SOLUTION: Power amplification elements 10 and at least one temperature compensation element 14 are adjacently disposed on a first semiconductor layer 16, and at least one of ground electrodes 13 disposed on at least one second semiconductor layer 17 existing in a different layer from the first semiconductor layer 16 is formed on the second semiconductor layer 17 in correspondence to an area on the same plane as the first semiconductor layer 16 which is projected substantially on a clearance part of the temperature compensation element 14 and the power amplification elements 10. |
