发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which is improved in operational reliability.SOLUTION: A nonvolatile semiconductor storage device in one embodiment includes a memory cell array and a control circuit. A memory cell array, which includes a plurality of memory cells, stores initial setting data in each of the plurality of storage areas. The control circuit reads the initial setting data from the plurality of storage areas. When detecting an error in the initial setting data that is read from one of the plurality of storage areas, the control circuit reads the initial setting data from another storage area.
申请公布号 JP2013206510(A) 申请公布日期 2013.10.07
申请号 JP20120075408 申请日期 2012.03.29
申请人 TOSHIBA CORP 发明人 NAGATOMI YASUSHI
分类号 G11C29/00;G11C16/02;H01L21/336;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C29/00
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