发明名称 ISOLATION GROOVE FORMATION METHOD OF INTEGRATED THIN FILM SOLAR CELL MODULE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of an integrated thin film solar cell module in which burr does not occur in a metal back electrode layer on the periphery of an isolation groove, and crack does not occur in the underlying metal back electrode layer, when forming an isolation groove in the metal back electrode layer.SOLUTION: An integrated thin film solar cell module 1 is manufactured by laminating an insulation layer 12, a buffer layer 13 consisting of silicon, a metal back electrode layer 14 in which isolation grooves P1, P2, P3 are formed, a light absorption layer 15, and a transparent electrode layer 17 sequentially on a substrate 11. In a method of forming the isolation groove P1 in the metal back electrode layer 14, the metal back electrode layer 14 is cut until the underlying buffer layer 13 is exposed, when forming the isolation groove P1 for isolating the metal back electrode layer 14.
申请公布号 JP2013206889(A) 申请公布日期 2013.10.07
申请号 JP20120070521 申请日期 2012.03.27
申请人 SHOWA SHELL SEKIYU KK 发明人 YAMAURA TOSHIAKI;HAMADA TSUTOMU;SUMINAKA HIRONOBU;HAMANO MIKIO
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址
您可能感兴趣的专利