| 摘要 |
PROBLEM TO BE SOLVED: To provide a secondary ion mass spectrometric technique capable of accurately measuring element distribution in a depth direction even for a sample including a thin layer having an extremely different spattering speed in irradiation of a primary ion beam.SOLUTION: A secondary ion mass spectrometer includes monitoring means for monitoring an intensity change ratio of secondary ions sputtered from a sample in irradiation of a primary ion beam and control means which when detecting a change of sample configuration layers on the basis of the intensity change ratio, controls an irradiation condition of a primary ion beam so as to change a measurement pitch in a depth direction by changing a sputtering quantity by one beam scanning. |
