| 摘要 |
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive composition, from which a pattern can be formed satisfying demands for high sensitivity, high resolution (for example, high resolving power, excellent pattern profile and small line edge roughness (LER)), high stability with time, good dry etching durability and little production of scum, and to provide a resist film, a resist coated mask blank, a method for forming a resist pattern and a photomask using the above composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive composition comprises (A) a compound expressed by general formula (I) and (B) a compound that generates an acid by irradiation with actinic rays or radiation. In general formula (I), Rrepresents an alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group or group having a silicon atom; Rand Reach independently represent a hydrogen atom, alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group, alkylsulfonyl group, aryl sulfonyl group or heterocyclic group; Rto Reach independently represent a hydrogen atom or a monovalent substituent; and A represents a monovalent organic group. |
