发明名称 VAPOR DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of preventing any thermal degradation in a vapor deposition material, and minimizing the remain of the vapor deposition material.SOLUTION: When a vapor deposition is executed at the necessary minimum temperature of a crucible 22 for the prescribed vapor deposition rate, the amount of a vapor deposition material 24 in the crucible 22 is reduced, and the evaporation amount of the vapor deposition material 24 from the crucible 22 (formation of evaporated particles to be supplied from the crucible 22) is reduced, and then the vapor deposition rate is reduced. Then, if the opening of a flow rate control valve 19 is abruptly increased to maintain the prescribed vapor deposition rate, the target heating temperature of the crucible 22 is raised by the prescribed value, the evaporation amount of the vapor deposition material 24 from the crucible 22 is increased, and the prescribed vapor deposition rate is maintained. Thus, since the target temperature is raised by the prescribed value, thermal degradation in the vapor deposition material 24 can be prevented, while the vapor deposition material 24 can be used to the last, and the remain of the vapor deposition material 24 can be minimized.
申请公布号 JP2013204101(A) 申请公布日期 2013.10.07
申请号 JP20120075272 申请日期 2012.03.29
申请人 HITACHI ZOSEN CORP 发明人 DAIKU HIROYUKI;KIKUCHI MASAHIRO;MATSUMOTO YUJI
分类号 C23C14/24;H01L51/50;H05B33/06;H05B33/10;H05B33/24;H05B33/26 主分类号 C23C14/24
代理机构 代理人
主权项
地址