发明名称 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method which grasp the deposition rate of a functional film deposited on a substrate and can thereby deposit the functional film of a predetermined thickness on the substrate.SOLUTION: A film deposition apparatus 1 is an apparatus for depositing a thin film on a substrate 30 as an object on which the film is deposited, and is provided with a crystal oscillator 21 on which a film is deposited in the same batch for the substrate 30, a film deposition chamber 61 for the deposition of a film on the substrate 30 and on the crystal oscillator 21, a frequency measurement part (probe unit 8) which measures the frequency of the crystal oscillator 21, and an arithmetic operation control unit which controls the film deposition chamber so that the thin film gets a predetermined thickness according to the film deposition rate derived from the frequency. The frequency measurement part (probe unit 8) measures the frequency of the oscillator before starting the batch and the frequency of the oscillator in the middle stage between the start of the batch and the finish of the batch, respectively, in the film deposition chamber.
申请公布号 JP2013204094(A) 申请公布日期 2013.10.07
申请号 JP20120074283 申请日期 2012.03.28
申请人 SEIKO EPSON CORP 发明人 TSUKADA KOJI;TAGUCHI HIROSHI;YAMAZAKI TADASHI
分类号 C23C14/54 主分类号 C23C14/54
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