| 摘要 |
PURPOSE: A semiconductor device, a nitride semiconductor crystal, a semiconductor device manufacturing method, and a nitride semiconductor crystal manufacturing method reduce the on-resistance by manufacturing the semiconductor device to make the ratio of yellow luminescence emission to band edge emission (YL/BE) be 400% or less and a twist value in an X-ray locking curve be 1,000 arcsec or less in a GaN layer. CONSTITUTION: A nucleation layer (21) is formed on a substrate (10). A buffer layer (30) is formed on the nucleation layer. A first nitride semiconductor layer (40) is formed on the buffer layer. A second nitride semiconductor layer (50) is formed on the first semiconductor layer. The ratio of yellow luminescence emission to band edge emission in photoluminescence is 400% or less. A twist value in an X-ray locking curve is 1,000 arcsec or less. [Reference numerals] (AA) Structure of a semiconductor device for a first embodiment |
