发明名称 |
LASER LIFT-OFF METHOD AND LASER LIFT-OFF APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To peel a material layer from a substrate securely without causing any cracking in laser lift-off processing.SOLUTION: A pulse laser emitted from a laser source 20 is irradiated to a workpiece W through a laser optical system 40 to peel a material layer (GaN crystal layer) from a sapphire substrate. Pulse waveform of the laser is measured by a pulse waveform measuring instrument 70 and transmitted to a control part 50. A calculation part 501 converts the laser pulse waveform to output power (W) and calculates an energy amount (available energy) from rising of the laser pulse to a time T based on the time T from rising of the laser pulse input by an input part 502 to a time when temperature of GaN becomes the highest and the laser pulse waveform. The available energy is compared with target available energy, a signal according to the difference is fed back to the laser source 20, and the available energy is controlled to correspond to the target available energy. |
申请公布号 |
JP2013202671(A) |
申请公布日期 |
2013.10.07 |
申请号 |
JP20120075969 |
申请日期 |
2012.03.29 |
申请人 |
USHIO INC |
发明人 |
TANAKA TOMOHITO;NARUMI KEIJI |
分类号 |
B23K26/40;B23K26/00;B23K26/36;H01L21/205;H01S5/323 |
主分类号 |
B23K26/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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