发明名称 LASER LIFT-OFF METHOD AND LASER LIFT-OFF APPARATUS
摘要 PROBLEM TO BE SOLVED: To peel a material layer from a substrate securely without causing any cracking in laser lift-off processing.SOLUTION: A pulse laser emitted from a laser source 20 is irradiated to a workpiece W through a laser optical system 40 to peel a material layer (GaN crystal layer) from a sapphire substrate. Pulse waveform of the laser is measured by a pulse waveform measuring instrument 70 and transmitted to a control part 50. A calculation part 501 converts the laser pulse waveform to output power (W) and calculates an energy amount (available energy) from rising of the laser pulse to a time T based on the time T from rising of the laser pulse input by an input part 502 to a time when temperature of GaN becomes the highest and the laser pulse waveform. The available energy is compared with target available energy, a signal according to the difference is fed back to the laser source 20, and the available energy is controlled to correspond to the target available energy.
申请公布号 JP2013202671(A) 申请公布日期 2013.10.07
申请号 JP20120075969 申请日期 2012.03.29
申请人 USHIO INC 发明人 TANAKA TOMOHITO;NARUMI KEIJI
分类号 B23K26/40;B23K26/00;B23K26/36;H01L21/205;H01S5/323 主分类号 B23K26/40
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